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V23990-P629-F73-PM preliminary datasheet flowboost 1200v/40a high efficiency dual boost ultra fast switching frequency low inductance layout 1200v igbt and 1200v si diode solar inverter V23990-P629-F73-PM tj=25c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm tj=25c 16 00 v t h =80c 34 t c = 80c 46 t h = 80c 4 1 t c = 80c 62 m aximum junction temperature t j max 15 0 c boost igbt collector-emitter break down voltage v ce tj=25c 12 00 v t h =80c 34 t c = 80c 47 t h = 80c 10 8 t c =80c 16 4 gate-emitter peak voltage v ge 25 v t sc t j 150c 1 0 s v cc v ge =15v 6 0 0 v maximum junction temperature t j max 15 0 c turn off safe operating area vce 800v, tj top max 160 a t j =t j max t p =10ms si n 180 220 i cpulse features surge forward current p tot power dissipation per diode i 2 t flow0 12mm housing target applications schematic bypass diode 200 t j =25c a types i 2 t-value maximum ratings i fav a 2 s i fsm condition t j =t j max 16 0 t p limited by t j max pu lsed collector current p tot a w a w a tj =tjmax short circuit ratings dc collector current i c dc forward current p o wer dissipation per igbt t j =t j max copyright vincotech 1 revision: 1
V23990-P629-F73-PM preliminary datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition boost igbt protection diode t h =80c 34 t c = 80c 47 t h = 80c 4 1 t c = 80c 62 boost fwd t h =80c 37 t c = 80c 50 t h = 80c 82 t c = 80c 12 5 thermal properties insulation properties v is t=2s dc voltage 4000 v min 12,7 mm min 12,7 mm t j =t j max t j =25c t j =t j max t p =10ms, sin 180 t p limited by t j max i fsm surge forward current a v t j =t j max 2 2 0 w w c maximum junction temperature power dissipation per diode i f dc forward current i f repetitive peak forward current v rrm t j max p tot power dissipation pe ak repetitive reverse voltage dc forward current i frm p tot 175 15 0 1200 150 a v a c a peak repetitive reverse voltage t j =25c 1 6 00 v rrm t j =t j max m a ximum junction temperature t j max - 40+(tjmax - 25) c storage temperature t stg -40+125 c c learance insulation voltage creepage distance t op operation temperature under switching condition copyright vincotech 2 revision: 1
V23990-P629-F73-PM preliminary datasheet pa rameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max tj=25c 1,13 1,21 tj=125c 1,09 tj=25c 0,93 tj=125c 0,80 tj=25c 0,008 tj=125c 0,011 tj=25c 0,05 tj=125c thermal resistance chip to heatsink per chip r thjh 1,71 thermal resistance chip to case per chip r thjc 1,13 tj=25c 3,5 5,5 7,5 tj=125c tj=25c 2,74 3,2 tj=125c 3,01 tj=25c 1 tj=125c tj=25c 250 tj=125c tj=25c 26 tj=125c 25 tj=25c 16 tj=125c 43 tj=25c 169 tj=125c 199 tj=25c 16 tj=125c 43 tj=25c 1,47 tj=125c 2,23 tj=25c 0,93 tj=125c 1,87 thermal resistance chip to heatsink per chip r thjh 0,65 thermal resistance chip to case per chip r thjc 0,43 tj=25c 1,13 1,21 tj=125c 1,08 thermal resistance chip to heatsink per chip r thjh 1,71 thermal resistance chip to case per chip r thjc 1,13 tj=25c 2,25 2,54 tj=125c 2,32 tj=25c 60 tj=125c tj=25c 98 tj=125c 117 tj=25c 78 tj=125c 152 tj=25c 3,71 tj=125c 7,08 tj=25c 1,83 tj=125c 3,69 di(rec)max tj=25c 5120 /dt tj=125c 4285 thermal resistance chip to heatsink per chip r thjh 1,16 thermal resistance chip to case per chip r thjc 0,76 600 50 700 30 25 700 0,00025 40 40 40 tj=25c 40 700 rgon=4 15 th e rmal grease thickness 50um = 1 w/mk 15 1 5 r goff=4 rgon=4 turn-on delay time ga t e emitter threshold voltage collector-emitter saturation voltage boost igbt gate-emitter leakage current int egrated gate resistor turn-off energy loss per pulse r gint turn-off delay time e on t d(off) turn-on energy loss per pulse fall time c rss v f q gate thermal grease thickness 50um = 1 w/mk the rmal grease thickness 50um = 1 w/mk v f t f f=1mhz v ce(sat) vce=vge i ges c oss i rrm i rm c ies t d(on) e off q rr e rec reverse recovery time reverse recovered energy forward voltage diode forward voltage input capacitance output capacitance reverse transfer capacitance boost igbt protection diode gate charge t rr boost fwd value conditions v ge(th) t r collector-emitter cut-off rise time i ces characteristic values forward voltage th reshold voltage (for power loss calc. only) slope resistance (for power loss calc. only) v f v to r t bypass diode 40 25 k/ w v v 40 ma i r reverse current tj=25c 0 v a reverse leakage current peak recovery current peak rate of fall of recovery current reverse recovery charge 0 1200 0 15 25 40 15 1600 thermal grease thickness 50um = 1 w/mk 22 0 3 70 3200 125 none pf a ns v c a/s k/w k/w mws v nc v na ns ma k/ w mws copyright vincotech 3 revision: 1
V23990-P629-F73-PM preliminary datasheet pa rameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max va lue con ditions characteristic values vincotech ntc reference 3950 k b 3996 k b-value b(25/100) tol. 3% b-value b(25/50) tol. 3% tj=25c tj=25c % 2 +5 -5 2 2000 mw/k power dissipation p mw 200 rated resistance r power dissipation constant deviation of r25 r/r r100=1503 tol. 5% thermistor tj=25c tj= 25c tc=100c tj=25c copyright vincotech 4 revision: 1
V23990-P629-F73-PM preliminary datasheet figure 1 boost igbt protection diode figure 2 boost igbt protection diode typical fwd forward current as diode transient thermal impedance a function of forward voltage as a function of pulse width i f = f(v f ) z thjh = f(t p ) at a t t p = 2 5 0 s d = tp / t r thjh = 1, 71 k/w figure 3 boo st igbt protection diode figure 4 boost igbt protection diode power dissipation as a forw ard current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) at a t t j = 1 5 0 oc t j = 15 0 oc boost igbt protection diode 0 20 40 60 80 100 0 0,5 1 1,5 2 v f (v) i f (a) t j = 25c t j = t jmax -25c t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 20 40 60 80 100 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 50 60 0 50 100 150 200 th ( o c) i f (a) copyright vincotech 5 revision: 1
V23990-P629-F73-PM preliminary datasheet figure 3 boost igbt figure 4 boost fwd typical output characteristics typi cal output characteristics i c = f(v ce ) i c = f(v ce ) at a t t p = 2 5 0 s t p = 25 0 s t j = 25 c t j = 12 5 c v gs from 7 v to 17 v in steps of 1 v v gs from 7 v to 17 v in steps of 1 v figure 3 boo st igbt figure 4 boost fwd typical transfer characteristics typi cal fwd forward current as i c = f(v ge ) a function of forward voltage i f = f(v f ) at a t t p = 2 5 0 s t p = 25 0 s v ds = 10 v input boost 0 25 50 75 100 125 0 1 2 3 4 5 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 10 20 30 40 0 2 4 6 8 10 v ge (v) i c (a) t j = 25c t j = t jmax -25c 0 20 40 60 80 100 120 0 1 2 3 4 5 v ce (v) i c (a) 0 20 40 60 80 100 120 0 1 2 3 4 5 v ce (v) i c (a) copyright vincotech 6 revision: 1
V23990-P629-F73-PM preliminary datasheet figure 5 boost igbt figure 6 boost igbt typical switching energy losses typi cal switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) wi th an inductive load at with an inductive load at t j = 2 5 /126 c t j = 25 /126 c v ds = 70 0 v v ds = 70 0 v v gs = 15 v v gs = 15 v r gon = 4 i d = 40 a r goff = 4 figur e 7 boo st igbt figure 8 boost igbt typical reverse recovery energy loss typi cal reverse recovery energy loss as a function of collector (drain) current as a function of gate resistor e rec = f(i c ) e rec = f(r g ) wi th an inductive load at with an inductive load at t j = 2 5 /126 c t j = 25 /126 c v ds = 70 0 v v ds = 70 0 v v gs = 15 v v gs = 15 v r gon = 4 i d = 40 a input boost e rec high t e rec low t 0 1 2 3 4 5 6 0 1 5 30 45 60 75 i c (a) e (mws) e rec high t e rec low t 0 1 2 3 4 5 0 5 1 0 15 20 r g ( w ww w ) e (mws) e off high t e on high t e on low t e off low t 0 1 2 3 4 5 0 2 0 40 60 80 i c (a) e (mws) e off high t e on high t e on low t e off low t 0 1 2 3 4 0 5 1 0 15 20 r g ( w ww w ) e (mws) copyright vincotech 7 revision: 1
V23990-P629-F73-PM preliminary datasheet figure 9 boost igbt figure 10 boost igbt typical switching times as a typi cal switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) wi th an inductive load at with an inductive load at t j = 1 2 6 c t j = 12 6 c v ds = 70 0 v v ds = 70 0 v v gs = 15 v v gs = 15 v r gon = 4 i c = 40 a r goff = 4 figur e 11 boo st fwd figure 12 boost fwd typical reverse recovery time as a typi cal reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(i c ) t rr = f(r gon ) at a t t j = 2 5 /126 c t j = 25 /126 c v ce = 70 0 v v r = 70 0 v v ge = 15 v i f = 40 a r gon = 4 v gs = 15 v input boost t doff t don t r 0,001 0, 01 0,1 1 0 15 30 45 60 75 i c (a) t ( m s) t f t doff t f t don t r 0,001 0, 01 0,1 1 0 5 10 15 20 r g ( w ww w ) t ( m s) t rr high t t rr low t 0,00 0, 05 0,10 0,15 0,20 0,25 0,30 0 5 10 15 20 r gon ( w ww w ) t rr ( m s) t rr high t t rr low t 0 0, 05 0,1 0,15 0,2 0,25 0 15 30 45 60 75 i c (a) t rr ( m s) copyright vincotech 8 revision: 1
V23990-P629-F73-PM preliminary datasheet figure 13 boost fwd figure 14 boost fwd typical reverse recovery charge as a typi cal reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c ) q rr = f(r gon ) at a t at t j = 2 5 /126 c t j = 25 /126 c v ce = 70 0 v v r = 700 v v ge = 15 v i f = 40 a r gon = 4 v gs = 15 v figur e 15 boo st fwd figure 16 boost fwd typical reverse recovery current as a typi cal reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c ) i rrm = f(r gon ) at a t t j = 2 5 /126 c t j = 25 /126 c v ce = 70 0 v v r = 70 0 v v ge = 15 v i f = 40 a r gon = 4 v gs = 15 v input boost i rrm high t i rrm low t 0 25 5 0 75 100 125 150 175 0 5 10 15 20 r gon ( w ww w ) i rrm (a) q rr high t q rr low t 0 2 4 6 8 0 5 1 0 15 20 r gon ( w ) q rr ( m c) i rrm high t i rrm low t 0 2 5 5 0 75 100 125 150 0 15 30 45 60 75 i c (a) i rrm (a) q rr high t q rr low t 0 2 4 6 8 1 0 1 2 0 15 30 45 60 75 i c (a) q rr ( m c) copyright vincotech 9 revision: 1
V23990-P629-F73-PM preliminary datasheet figure 17 boost fwd figure 18 boost fwd typical rate of fall of forward typi cal rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) di 0 / dt,di rec /dt = f(r gon ) at a t t j = 2 5 /126 c tj = 25/126 c v ce = 70 0 v v r = 700 v v ge = 15 v i f = 40 a r gon = 4 v gs = 15 v figur e 19 boo st igbt figure 20 boost fwd igbt/mosfet transient thermal impedance fwd transient t hermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p ) z thjh = f(t p ) at a t d = t p / t d = t p / t r thjh = 0, 65 k/w r thjh = 1, 16 k/w igbt thermal model values fwd thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,198 0,495 0,041 5,298 0,347 0,111 0,115 1,001 0,075 0,015 0,447 0,186 0,028 0,001 0,324 0,053 0,027 0,004 0,154 0,012 input boost 0 2000 4000 6000 8000 10000 0 5 10 15 20 r gon ( w ) di rec / dt (a/ m s) di 0 /dt di rec /dt t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 1500 3000 4500 6000 7500 0 20 40 60 80 i c (a) di rec / dt (a/ m s) di 0 /dt di rec /dt copyright vincotech 10 revision: 1
V23990-P629-F73-PM preliminary datasheet figure 21 boost igbt figure 22 boost igbt power dissipation as a coll ector/drain current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i c = f(t h ) at a t t j = 1 5 0 oc t j = 15 0 oc v gs = 15 v figure 23 boo st fwd figure 24 boost fwd power dissipation as a forw ard current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) at a t t j = 1 7 5 oc t j = 17 5 oc input boost 0 50 100 150 200 250 0 50 100 150 200 th ( o c) p tot (w) 0 15 30 45 60 75 0 50 100 150 200 th ( o c) i c (a) 0 25 50 75 100 125 150 175 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 60 0 50 100 150 200 t h ( o c) i f (a) copyright vincotech 11 revision: 1
V23990-P629-F73-PM preliminary datasheet figur e 25 boo st igbt figure 26 boost igbt safe operating area as a function gat e voltage vs gate charge of drain-source voltage i c = f(v ce ) v ge = f(qg) at a t d = single pulse i d = 4 0 a t h = 80 oc v gs = 15 v t j = t jmax oc input boost v ce (v) i c (a) 10 3 10 10 1 10 10 2 10 3 10us 100us 1ms 10ms 100ms dc 10 2 0 3 6 9 12 15 0 50 100 150 200 250 qg (nc) v ge (v) 200v 600v copyright vincotech 12 revision: 1
V23990-P629-F73-PM preliminary datasheet figure 1 bypass diode figure 2 bypass diode typical diode forward current as diode transient thermal impedance a function of forward voltage as a function of pulse width i f = f(v f ) z thjh = f(t p ) at a t t p = 2 5 0 s d = t p / t r thjh = 1, 705 k/w figure 3 byp ass diode figure 4 bypass diode power dissipation as a forw ard current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) at a t t j = 1 5 0 oc t j = 15 0 oc bypass diode 0 20 40 60 80 100 0 0,5 1 1,5 2 v f (v) i f (a) t j = 25c t j = t jmax -25c t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 20 40 60 80 100 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 60 70 0 50 100 150 200 t h ( o c) i f (a) copyright vincotech 13 revision: 1
V23990-P629-F73-PM preliminary datasheet figure 1 thermistor typical ntc characteristic as a function of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 5 0 00 10000 15000 20000 25000 25 50 75 100 125 t (c) r/ copyright vincotech 14 revision: 1
V23990-P629-F73-PM preliminary datasheet t j 125 c r gon 4 r goff 4 figur e 1 boo st igbt figure 2 boost igbt turn-off switching waveforms & definition of t doff , t eoff turn-on switching waveforms & definition of t don , t eon (t eoff = integrating time for e off ) (t eon = integrating time for e on ) v ge (0%) = 0 v v g e (0%) = 0 v v g e (100%) = 15 v v ge (100%) = 15 v v c (100%) = 70 0 v v c (100%) = 70 0 v i c (100%) = 40 a i c (100%) = 40 a t doff = 0, 20 s t don = 0, 03 s t eoff = 0, 54 s t eon = 0, 15 s figure 3 boo st igbt figure 4 boost igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 70 0 v v c (100%) = 70 0 v i c (100%) = 40 a i c (100%) = 40 a t f = 0, 04 s t r = 0, 01 s switching definitions boost igbt general conditions = = = i c 1% v ce 90% v ge 90% -25 0 25 5 0 75 100 125 -0,2 0 0,2 0,4 0,6 time (us) % t doff t eoff v ce i c v ge i c 10% v ge10% t don v ce 3% -100 0 10 0 200 300 400 2,95 3 3,05 3,1 3,15 3,2 time(us) % i c v ce t eon v ge fitted i c 10% i c 90% i c 60% i c 40% -25 0 25 5 0 75 100 125 0,05 0,1 0,15 0,2 0,25 time (us) % v ce i c t f i c10% i c 90% -100 0 10 0 200 300 400 2,95 3 3,05 3,1 3,15 time(us) % t r v ce i c copyright vincotech 1 5 r evision: 1
V23990-P629-F73-PM preliminary datasheet figure 5 boost igbt figure 6 boost igbt turn-off switching waveforms & definition of t eoff turn-on switching waveforms & definition of t eon p off (100%) = 27 ,95 kw p on (100%) = 27 ,95 kw e off (100%) = 1, 87 mj e on (100%) = 2, 23 mj t eoff = 0, 54 s t eon = 0, 15 s figure 7 boo st igbt figure 8 boost fwd gate voltage vs gate charge (measured) turn- off switching waveforms & definition of t rr v geoff = 0 v v d (100%) = 70 0 v v geon = 15 v i d (100%) = 40 a v c (100%) = 70 0 v i rrm (100%) = -1 17 a i c (100%) = 40 a t rr = 0, 15 s q g = 17 8,86 nc switching definitions boost igbt i c 1% v ge 90% -20 0 2 0 4 0 60 80 100 120 -0,2 0 0,2 0,4 0,6 time (us) % p off e off t eoff v ce 3% v ge 10% -50 0 50 1 00 150 200 250 300 2,95 3 3,05 3,1 3,15 3,2 time(us) % p on e on t eon -5 0 5 10 15 20 -50 0 50 100 150 200 qg (nc) v ge (v) i rrm 10% i rrm 90% i rrm 100% t rr -300 -2 00 -100 0 100 200 3 3,1 3,2 3,3 3,4 time(us) % i d v d fitted copyright vincotech 1 6 r evision: 1
V23990-P629-F73-PM preliminary datasheet figure 9 boost fwd figure 10 boost fwd turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec (t qrr = integrating time for q rr ) (t erec = integrating time for e rec ) i d (100%) = 4 0 a p rec (100%) = 27 ,95 kw q rr (100%) = 7, 08 c e rec (100%) = 3, 69 mj t qrr = 1, 00 s t erec = 1, 00 s switching definitions boost fwd t qrr -300 - 2 00 -100 0 100 200 2,8 3,2 3,6 4 4,4 time(us) % i d q rr -50 0 50 100 150 200 3 3,2 3,4 3,6 3,8 4 4,2 time(us) % p rec e rec t erec copyright vincotech 1 7 r evision: 1
V23990-P629-F73-PM preliminary datasheet version ordering code in datamatrix as in packaging barcode as without thermal paste 12mm housing V23990-P629-F73-PM p629-f73-pm p629-f73-pm outline pinout ordering code & marking ordering code and marking - outline - pinout copyright vincotech 18 revision: 1
V23990-P629-F73-PM preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: product status datasheet status definition this datasheet contains the design specifications for product development. specifications may change in any manner without notice. the data contained is exclusively intended for technically trained staff. vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. target preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tested values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. copyright vincotech 19 revision: 1

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